- 您现在的位置：买卖IC网 > Sheet目录123 > BY329-1500S,127 (NXP Semiconductors)DIODE RECT 1200V 6A TO-220AC
                      Philips Semiconductors Product specification Damper diode BY329-1500, BY329-1500S fast, high-voltage STATIC CHARACTERISTICS Tj = 25 ?C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BY329 1500 1500S 1500 1500S VF Forward voltage IF = 6.5 A 1.1 1.3 1.45 1.6 V IF = 6.5 A; T j = 125 ?C 1.05 1.2 1.35 1.5 V Reverse current VR = 1300 V - 250 - 250 μA VR = 1300 V; T j = 125 ?C - 1 - 1 mA IR DYNAMIC CHARACTERISTICS Tj = 25 ?C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BY329 1500 1500S 1500 1500S trr Reverse recovery time IF = 1 A; V R ≥ 30 V; 0.18 0.13 0.23 0.16 dIF/dt = 50A/μs Reverse recovery charge IF = 2 A; -dI F/dt = 20 A/μs 1.6 0.7 2.0 0.95 Peak forward recovery voltage IF = 6.5A; dI F/dt = 50A/μs 17233040V Forward recovery time IF = 6.5A; dI F/dt = 50A/μs 210 220 300 320 ns μs Q Vs t fr fr μC Fig.1. Definition of Vfr and tfr Fig.2. Definition of trr and Q s time time V 5V F V fr V F I F 10% tfr 100% time dI F dt IR I F trr 25% Qs September 1998 2 Rev 1.100 |